A novel capacitor-less DRAM cell using Thin Capacitively-Coupled Thyristor (TCCT)

摘要

A novel capacitor-less DRAM cell using a thin capacitively-coupled thyristor (TCCT DRAM) is introduced. Experimental results from unit memory cell fabricated in a 130nm SOI logic technology demonstrate Ion/Ioff ratio of 10{sup}7, non-destructive Read, Write speed less than 2ns at 125C, and solid retention characteristics. These cell characteristics combined with a small cell area (as low as 9F{sup}2) and simple process integration make TCCT DRAM a suitable candidate for high-performance high-density embedded or standalone memory applications.