All-electrical control of scaled spin logic devices based on domain wall motion

摘要

Spin logic devices based on domain wall (DW) motion offer flexible architectures to store and carry logic information in a circuit. In this device concept, information is encoded in the magnetic state of a magnetic track shared by multiple magnetic tunnel junctions (MTJs) and is processed by DW motion. Here, we demonstrate that all-electrical control of such nanoscale DW-based logic devices can be realized using a novel MTJ stack. In addition to field-driven motion, which is isotropic, we show directional motion of DWs driven by current, a key requirement for logic operation. Full electrical control of an AND logic gate using DW motion is demonstrated. Our devices are fabricated in imec’s 300 mm CMOS fab on full wafers which clears the path for large scale integration. This proof-of-concept thus offers potential solutions for high-performance and low-power DW-based devices for logic and neuromorphic applications.