Reliability Improvement of Resistance Switching Devices by Insertion of a Novel 2D Material MXene

摘要

High-density and reliable electronic synapses with bipolar resistive switching behavior are the building blocks for the hardware implementation of artificial neural network. However, the power consumption and reliability of resistance states are major challenges for commercialization of electronic synapses. Here, a fully complementary metal-oxide semiconductor (CMOS)-compatible resistance switching device and its crossbar arrays with the introduction of a novel two-dimensional transition metal carbides MXene (Ti