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Microelectronics neural bridge IC with voltage stimulation

机译:微电子神经桥IC,电压刺激

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A microelectronics neural bridge IC with voltage stimulation designed in CSMC 0.5μm CMOS process is presented. This IC is expected to be used for bridging animal's spinal nerves or peripheral nerves. It is composed of a neural electrical signal detecting circuit, a signal amplifying circuit, a DC offset compensating circuit and a functional electrical stimulation (FES) circuit. Two high performance op-amps are designed in the microelectronics neural bridge IC: a low noise op-amp and a constant-transconductance (constant-gm) rail-to-rail input/output op-amp. According to the neural signal spectrum, the bandwidth of the IC is designed from 400 Hz to 4 kHz. The chip area is 1050μm×850μm. The power consumption is 914μA when the supply voltage is ± 2.5V.
机译:提出了一种微电子神经桥IC,具有在CSMC0.5μmCMOS工艺中设计的电压刺激。该IC预计将用于桥接动物的脊神经或周围神经。它由神经电信号检测电路,信号放大电路,DC偏移补偿电路和功能电刺激(FES)电路组成。两个高性能OP-AMPS设计在微电子神经桥IC:低噪声OP-AMP和恒定跨导(恒定-G M )轨到轨输入/输出OP-AMP 。根据神经信号频谱,IC的带宽从400Hz设计为4 kHz。芯片面积为1050μm×850μm。电源电压为±2.5V时功耗为914μA。

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