首页> 外文会议>SPIE Advanced Lithography Conference >Model improvements to simulate charging in SEM
【24h】

Model improvements to simulate charging in SEM

机译:模拟SEM中的充电的模型改进

获取原文

摘要

Charging of insulators is a complex phenomenon to simulate since the accuracy of the simulations is very sensitive to the interaction of electrons with matter and electric fields. In this study, we report model improvements for a previously developed Monte-Carlo simulator to more accurately simulate samples that charge. The improvements include both modelling of low energy electron scattering and charging of insulators. The new first-principle scattering models provide a more realistic charge distribution cloud in the material, and a better match between non-charging simulations and experimental results. Improvements on charging models mainly focus on redistribution of the charge carriers in the material with an induced conductivity (EBIC) and a breakdown model, leading to a smoother distribution of the charges. Combined with a more accurate tracing of low energy electrons in the electric field, we managed to reproduce the dynamically changing charging contrast due to an induced positive surface potential.
机译:绝缘体的充电是模拟的复杂现象,因为模拟的精度对电子与电场的相互作用非常敏感。在本研究中,我们报告了先前开发的Monte-Carlo模拟器的模型改进,以更准确地模拟电荷的样本。改进包括低能量电子散射和绝缘体充电的建模。新的第一原理散射模型在材料中提供了更现实的电荷分布云,并且在非充电模拟和实验结果之间更好地匹配。充电模型的改进主要集中在具有诱导电导率(EBIC)和击穿模型的材料中的电荷载体的再分布,导致电荷的平滑分布。结合电场中的低能量电子的更精确追踪,我们设法由于诱导的正面电位而再现动态变化的充电对比度。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号