Study and Conception of a Model to Simulate Charged Transfer Devices at Surface in Volume Etude et Realisation d'UN Modele pour la Simulation des Dispositifs a Transfert de Charge en Surface et en Volume

摘要

The development of a computer program which services a theoretical aid in the design of a change coupled device (CCD) imagers and filters. Any complete CCD includes a large number of combustions of conductor - oxide semiconductor and conductor - semiconductor structures. The CCD can be operated in a variety of ways. The mathematical basis of standard CCD potential and charge transfer simulation is presented. The theoretical model for transient analysis is described. The potential calculations the truncations of fourier series influence CCD surfaces. A basic mathematical to develop a method which supplies the required generality. TRANCH was developed and applications are presented. The potentials of TRANCH and extensions of the program are confirmed.