Ku-band Broadband Power Amplifier Designed in 0.2μm GaAs PHEMT Process

摘要

A Ku-band MMIC of power amplifier has been designed in the standard 0.2μm AlGaAs/InGaAs/GaAs PHEMT process of OMMIC. The monolithically integrated single-ended 3-stage power amplifier is biased at class A state. The resistors have been added in series or in parallel with the gate of the PHEMT for each stage to improve the stability. Under a single supply voltage of +3.5V, simulations prove that the circuit exhibits a linear output power of more than 28dBm (P{sub}(1dB)), small signal gain of 21dB, input return loss of less than -15dB, output return loss of less than -5dB and power additional efficiency of 23.5%.