Broadband GaAs MESFET Power Amplifier Design Aspects

摘要

This report presents design aspects of ultra-wideband GaAs MESFET power amplifiers which are directed to ECM and EW system applications. Fundamental gain-bandwidth limitations are derived for state-of-the-art GaAs MESFET power devices. Broadband designs are developed in the 2- to 18-GHz range using analytical and computer-aided optimization techniques. These designs are based upon small-and large-signal device characterization and modeling. Presented are systematic procedures required to arrive at the final designs. Modeling techniques and their utilization as a tool in achieving optimum performance are described. Included in this report is a discussion of the laboratory methods employed to perform small-and large-signal device characterization and analysis. (Author)