Deep trench isolation (DTI) with “walkout” onset tunneling voltage (V) can cause serious confusion for performance enhancement and process optimization in technology development. The ordinary breakdown voltage (BV) “walkout” phenomenon occurs when a premature avalanche breakdown injects high energy carriers into an oxide so that subsequent stress may causes an increase in oxide breakdown voltage [1]. However, the increase in the V with multiple I-V sweeps for our DTI structures are of very different origins. This is the first report on the characterization of V “walkout” in HV deep trench isolation (DTI) on SOI.
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