A 3D Analytical Modeling of Dual-Metal Tri-Gate Silicon-On-Nothing Tunneling Field Effect Transistor

摘要

In this paper, first time a three-dimensional analytical model of dual-metal triple-gate silicon-on-nothing tunneling field effect transistor (DMTG SON TFET) is presented. This model is derived by solving the 3D Poisson's equation. Simulation of 3D device lowered the need of parameter fittings. In addition, two different metals form a barrier over the channel region, which restricts reverse tunneling of carrier from drain to source. Choice of two different metals increases the on current and decreases the off current, thus improving the on-off current ratio of this proposed device. The electric field and the surface potential are obtained by solving the 3D Poisson's equation with proper boundary condition and the drain current is modeled by using the Kane's model also. The performance comparison of the proposed structure is done with the single-metal SON TFET and double-metal SOI TFET. The 3D analytical results are simulated using SILVACO ATLAS for this structure.