Analysis of SiC MOSFET Switching Performance and Driving Circuit

摘要

The switching characteristic of silicon carbide (SiC) MOSFET and silicon (Si) MOSFET are compared and analyzed in this paper. SiC MOSFET has advantage of low losses by capturing the switching trajectories. A driving resistance analysis model in switching process is proposed. Driving circuits of SiC MOSFET for different power converters are analyzed. In addition, the crosstalk of bridge circuit is discussed. The method of suppressing the crosstalk spikes in the bridge circuit is given and is simulated by LTspice. The result of simulation proves the suppression function to the spikes of driving circuits and the feature of each circuit is summarized. Finally, a better design of layout for driving circuits is given, compared with the traditional design, the switching loss in the circuit can be reduced. The theoretical basis is provided for driving circuit of SiC MOSFET in practical application.