首页> 外文会议>EOS topical meeting on terahertz science technology >Investigation of THz photoconductivity and carriers lifetime in narrow-gap Hg_yCd(1-y)Te/Cd(1-x)Hg_xTe QW and bulk structures with graphene-like energy-momentum law

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Investigation of THz photoconductivity and carriers lifetime in narrow-gap Hg_yCd(1-y)Te/Cd(1-x)Hg_xTe QW and bulk structures with graphene-like energy-momentum law

机译：窄间隙HG_YCD（1-Y）TE / CD（1-X）HG_XTE QW和散装结构的窄间隙HG_YCD（1-Y）HG_XTE QW和散装结构的研究

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Spectra and relaxation kinetics of THz photoconductivity in narrow gap bulk HgCdTe solid solutions and HgTe/CdTe based QWs have been measured at T = 4.2 - 77 K. The estimations show possibilities for bandgap detectors as well as optically pumped lasers for THz frequency range.

机译：在T = 4.2 - 77K中测量了窄间隙散装HGCDTE固体溶液和HGTE / CDTE基QWS中THz光电导性的光谱和弛豫动力学。估计显示带隙检测器的可能性以及用于THz频率范围的光学泵浦激光器。

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《EOS topical meeting on terahertz science technology》|2012年||共2页
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S.V. Morozov; V.V. Rumyantsev; V.Ya. Aleshkin; A.V. Antonov; M.S. Joludev; K.E. Kudryavtsev; V.I. Gavrilenko; N.N. Michailov; O.Drachenko; S.Winnerl; H.Schneider; M.Helm;
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中图分类应用光学;
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1. Study of lifetimes and photoconductivity relaxation in heterostructures with Hg _xCd _(1-x)Te/Cd _yHg _(1-y)Te quantum wells [J] . Morozov S.V., Joludev M.S., Antonov A.V., Semiconductors . 2012,第11期

机译：Hg _xCd _（1-x）Te / Cd _yHg _（1-y）Te量子阱的寿命和光导弛豫的研究
2. Spectra and kinetics of THz photoconductivity in narrow-gap Hg_(1-x)Cd_xTe (x ＜ 0.2) epitaxial films [J] . V V Rumyantsev, S V Morozov, A V Antonov, Semiconductor science and technology . 2013,第12期

机译：窄间隙Hg_（1-x）Cd_xTe（x ＜0.2）外延膜中太赫兹光电导的光谱和动力学
3. Nonparabolicity effects on carrier lifetimes in bulk Hg_(1-x)Cd_xTe alloys and Mid-Infrared 2D Hg_(1-x)Cd_xTe/CdTe Single Quantum Well Lasers [J] . F.Z. Mami, A. Kadri, N. Mokdad, Superlattices and microstructures . 2021,第Feba期

机译：在批量Hg_（1-x）cd_xte合金和中红外2d hg_（1-x）cd_xte / cdte单量子阱激光器上的非分解效应
4. Investigation of THz photoconductivity and carriers lifetime in narrow-gap Hg_yCd(1-y)Te/Cd(1-x)Hg_xTe QW and bulk structures with graphene-like energy-momentum law [C] . S.V. Morozov, V.V. Rumyantsev, V.Ya. Aleshkin, EOS topical meeting on terahertz science technology . 2012

机译：窄间隙Hg_yCd（1-y）Te / Cd（1-x）Hg_xTe量子阱中的THz光电导率和载流子寿命研究与类石墨烯的能量动量定律
5. Magneto-optical investigations of II-VI DMS heterostructures: zinc(1-x-y) manganese(x) cadmium(y) selenium/zinc(1-x) manganese(x) selenium single quantum wells, zinc(1-x) cadmium(x) selenium/zinc(1-y) manganese(y) selenium type-I and cadmium selenide/zinc telluride based type-II superlattices. [D] . Zhang, Fu-Cai. 1994

机译：II-VI DMS异质结构的磁光研究：锌（1-xy）锰（x）镉（y）硒/锌（1-x）锰（x）硒单量子阱，锌（1-x）镉（ x）硒/锌（1-y）锰（y）硒I型和硒化镉/碲化锌的II型超晶格。
6. Effects of Spin Polarization on Electron Transport in Modulation Doped Cd(1-x)Mn(x)Te/Cd(1-y)Mg(y)Te:I Heterostructures [O] . Andrearczyk T., Jaroszynski J., Karczewski G., 2001

机译：自旋极化对调制掺杂的电子输运的影响 Cd（1-x）mn（x）Te / Cd（1-y）mg（y）Te：I异质结构
7. Investigation of the Equivalent Circuit and Carrier Lifetimes of Si/SiGe Heterostructure P-N Diodes for Frequencies Between 0.5 and 18.5 MHz (Undersoekning av Ekvivalenta Kretsen Samt Laddningsbaerarnas Livslaengder f r Frekvenser Mellan 0,5 och 18,5 MHz i Si/SiGe Baserade Heterostruktur-Dioder av P-N Typ) [R] . Ahlfors, L. , Rudner, S. , Willander, M. 1987

机译：对于频率在0.5和18.5 mHz之间的si / siGe异质结pN二极管的等效电路和载波寿命的研究（Undersoekning av Ekvivalenta Kretsen samt Laddningsbaerarnas Livslaengder fr Frekvenser mellan 0,5 och 18,5 mHz i si / siGe Baserade Heterostruktur-Dioder av pN Typ）

Investigation of THz photoconductivity and carriers lifetime in narrow-gap Hg_yCd(1-y)Te/Cd(1-x)Hg_xTe QW and bulk structures with graphene-like energy-momentum law

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