首页> 外文会议>EOS topical meeting on terahertz science technology >Investigation of THz photoconductivity and carriers lifetime in narrow-gap Hg_yCd(1-y)Te/Cd(1-x)Hg_xTe QW and bulk structures with graphene-like energy-momentum law

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Investigation of THz photoconductivity and carriers lifetime in narrow-gap Hg_yCd(1-y)Te/Cd(1-x)Hg_xTe QW and bulk structures with graphene-like energy-momentum law

机译：窄间隙Hg_yCd（1-y）Te / Cd（1-x）Hg_xTe量子阱中的THz光电导率和载流子寿命研究与类石墨烯的能量动量定律

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Spectra and relaxation kinetics of THz photoconductivity in narrow gap bulk HgCdTe solid solutions and HgTe/CdTe based QWs have been measured at T = 4.2 - 77 K. The estimations show possibilities for bandgap detectors as well as optically pumped lasers for THz frequency range.

机译：已在T = 4.2-77 K下测量了窄间隙整体HgCdTe固溶体和基于HgTe / CdTe的量子阱中THz光电导的光谱和弛豫动力学。估计显示出带隙检测器以及THz频率范围内的光泵浦激光器的可能性。

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《EOS topical meeting on terahertz science technology》|2012年|106-107|共2页
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S.V. Morozov; V.V. Rumyantsev; V.Ya. Aleshkin; A.V. Antonov; M.S. Joludev; K.E. Kudryavtsev; V.I. Gavrilenko; N.N. Michailov; O.Drachenko; S.Winnerl; H.Schneider; M.Helm;
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1. Study of lifetimes and photoconductivity relaxation in heterostructures with Hg _xCd _(1-x)Te/Cd _yHg _(1-y)Te quantum wells [J] . Morozov S.V., Joludev M.S., Antonov A.V., Semiconductors . 2012,第11期

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4. Investigation of THz photoconductivity and carriers lifetime in narrow-gap Hg_yCd(1-y)Te/Cd(1-x)Hg_xTe QW and bulk structures with graphene-like energy-momentum law [C] . S.V. Morozov, V.V. Rumyantsev, V.Ya. Aleshkin, EOS topical meeting on terahertz science technology . 2012

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Investigation of THz photoconductivity and carriers lifetime in narrow-gap Hg_yCd(1-y)Te/Cd(1-x)Hg_xTe QW and bulk structures with graphene-like energy-momentum law

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