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Nanoscale Memories for Compute Applications

机译:纳米级存储器用于计算应用程序

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As the performance gap between the CPU and the HDD has increased over time, NAND Flash based Solid State Drive (SSD) has emerged as an ideal candidate to fill this space. While continued cell scaling will further solidify the position of the NAND Flash in the compute applications, eventually it will hit a scaling wall creating opportunities for other types of memories. The vision for such a future memory technology involves a cross-point memory array that will be stackable in the back end CMOS flow and will be scalable to the 10nm half-pitch and below. Some of these memories, depending upon their improved performance over NAND Flash, may also have their unique position in the overall memory hierarchy of a compute system.
机译:随着CPU和HDD之间的性能差距随着时间的推移而增加,NAND基于闪存的固态驱动器(SSD)已成为填补此空间的理想候选者。虽然持续的细胞缩放将进一步凝固NAND闪光在计算应用中的位置,最终它将击中缩放墙,从而为其他类型的存储器创造机会。这种未来存储器技术的愿景涉及交叉点存储器阵列,其将堆叠在后端CMOS流中,并且将可扩展到10nm半间距和下方。根据其对NAND闪存的改进性能,其中一些记忆中的一些存储器也可能在计算系统的整体内存层次中具有它们的唯一位置。

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