Optical rectification and down-conversion of fs pulses into mid-IR and THz range in GaSe_(1-x)S_x

摘要

Design of top S-doped GaSe growth technology is completed. New methods for characterization of high optical quality crystals are proposed that allowed selection optimally doped crystals. Frequency conversion of fs pulses into 6.5-35 μm and into 0.2-4.5 THz is realized. S-doped crystals demonstrated advantages from 50-70% in the first experiments up to 8.5-15 times in the following experiments depending on experimental conditions.