首页> 外文期刊>Applied Physics Letters >Response to 'Comment on GaSe_(1-x)S_x and GaSe_(1-x)Te_x thick crystals for broadband terahertz pulses generation' [Appl. Phys. Lett. 100,136103 (2012)]
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Response to 'Comment on GaSe_(1-x)S_x and GaSe_(1-x)Te_x thick crystals for broadband terahertz pulses generation' [Appl. Phys. Lett. 100,136103 (2012)]

机译:对“评论GaSe_(1-x)S_x和GaSe_(1-x)Te_x厚晶体用于宽带太赫兹脉冲产生”的回应[Appl。物理来吧100,136103(2012)]

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摘要

In our paper, we reported that doping of GaSe with S and Te reduces the absorption peak at 0.59 THz. In the comment2 on our paper, Ku et al. suggested that the appearance of the absorption resonance near 1.8 THz in these doped crystals is to be taken into consideration as it could make the broadband THz generation impossible. This phonon resonance is indeed present in mixed GaSe_(1-x)S_x and GaSe_(1-x)Te_x crystals, and we provide an additional accurate measurement of this absorption peak here (Fig. 1(a)).
机译:在我们的论文中,我们报道了用S和Te掺杂GaSe会降低0.59 THz处的吸收峰。在本文的评论2中,Ku等人。建议将这些掺杂晶体中接近1.8 THz的吸收共振的出现考虑在内,因为这可能使宽带THz的产生变得不可能。这种声子共振确实存在于混合的GaSe_(1-x)S_x和GaSe_(1-x)Te_x晶体中,我们在此提供了对该吸收峰的另一精确测量值(图1(a))。

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  • 来源
    《Applied Physics Letters》 |2012年第13期|p.136104.1-136104.2|共2页
  • 作者单位

    Department of Physics and International Laser Center, M. V. Lomonosov Moscow State University, Moscow 119992, Russia;

    Semiconductor Materials Science Laboratory, Siberian Physical and Technical Institute of Tomsk State University, Tomsk 634034, Russia;

    Department of Physics and International Laser Center, M. V. Lomonosov Moscow State University, Moscow 119992, Russia;

    Semiconductor Materials Science Laboratory, Siberian Physical and Technical Institute of Tomsk State University, Tomsk 634034, Russia;

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