首页> 外文会议>IET Colloquium on Millimetre-Wave and Terahertz Engineering Technology >MILLIMETRE WAVE SEMICONDUCTOR BASED ISOLATORS AND CIRCULATORS
【24h】

MILLIMETRE WAVE SEMICONDUCTOR BASED ISOLATORS AND CIRCULATORS

机译:基于毫米波半导体的隔离器和循环器

获取原文
获取外文期刊封面目录资料

摘要

This paper illustrates the use of gyroelectric behaviour of magnetically biased semiconductors in designing non-reciprocal components, namely isolators and circulators, working in the millimetre wave frequency range. Two types of isolators are proposed to work in the V band (50 - 75 GHz) designed by inserting an Indium Antimonide (InSb) at liquid nitrogen temperature inside a rectangular waveguide. More than 30 dB differential isolation was obtained in both designs by transversely biasing the InSb slabs with magnetic field of 0.5 T. In addition, different types of Semiconductor Junction Circulators (SJC's) working in higher frequency ranges are illustrated. Theoretical analysis and electromagnetic simulation show that circulation is possible at frequencies up to 650 GHz using InSb cooled down to 77 K. It is also shown that non-reciprocal behaviour for circulators is possible by exploiting the high mobility Two Dimensional Electron Gas (2-DEG) layers in heterostructures. Despite the low temperature operation required for these components, these designs can be regarded as promising candidates for currently unavailable non-reciprocal components in millimetre-wave and THz frequency ranges.
机译:本文说明了在设计非互易成分,即隔离器和循环器的磁偏置半导体中使用磁偏置半导体的使用,在毫米波频率范围内工作。提出了两种类型的隔离器来在V频带(50-75GHz)中工作,通过在矩形波导内的液氮温度下插入液氮温度下设计。通过横向偏置具有0.5T的磁场的INSB板,两种设计中获得了超过30dB的差分隔离。另外,示出了在较高频率范围内工作的不同类型的半导体结循环器(SJC)。理论分析和电磁仿真表明,使用INSB冷却至77k的频率在高达650GHz的频率下可以进行循环。还示出了通过利用高迁移率二维电子气体(2° )异质结构中的层。尽管这些组件所需的温度较低,但这些设计可以被视为在毫米波和THZ频率范围内的目前不可用的非互易组件的承诺候选者。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号