Molecular Beam Epitaxy of A1N Layers on Si (111)

摘要

In this work, aluminum nitride (A1N) thin films are epitaxially grown by Molecular Beam Epitaxy (MBE) on silicon substrates in order to fabricate thin film bulk acoustic resonators (TFBARs). Using atomic force microscopy, scanning electron microscopy and X-ray diffraction, we study the quality of A1N films as a function of different silicon surface preparation techniques. Finally, acoustic picosecond measurements are presented.