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Anomalous behaviours of magneto-photoluminescencein n-type modulation-doped Cd1-xMnxTe/Cd1-yMgyTesingle quantum wells

机译：n型调制掺杂Cd1-xMnxTe / Cd1-yMgyTes单量子阱中磁光致发光的异常行为

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Magneto-photoluminescence measurements were performed onn-type modulation-doped Cd1-xMnxTe/Cd1-yMgyTe single quantum wellsunder magnetic fields up to 25T. We found an anomalous kink of main PLline between ν=2 and 1. The field position of the observed kink coincidesroughly with that of the switch of the Fermi level between the oppositespin states in the calculation.

机译：在高达25T的磁场下，对n型调制掺杂的Cd1-xMnxTe / Cd1-yMgyTe单量子阱进行磁光致发光测量。我们发现主PLline在ν= 2和1之间存在异常扭结。在计算中，观察到的扭结的场位置与费米能级在相反自旋状态之间切换的位置大致重合。

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《》|2002年|1-5|共5页
会议地点 Edinburgh(GB);Edinburgh(GB)
作者
Fumiyoshi Takano; Shinji Kuroda; K?ki Takita; Yasutaka Imanaka; Tadashi Takamasu; Giyuu Kido;
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Present address: Nanotechnology Research Institute (NRI) National Institute ofAdvanced Industrial Science and Technology (AIST) AIST Tsukuba Central 4 1-1-1Higashi Tsukuba Ibaraki 305-8562 Japan E-mail: fumi.takano@aist.go.jp;

Institute of Materials Science University of Tsukuba 1-1-1 Tennoudai Tsukuba Ibaraki 305-8573 Japan;

Institute of Materials Science University of Tsukuba1-1-1 Tennoudai Tsukuba Ibaraki 305-8573 Japan;

Now also at: Semiconductor Physics Group Cavendish Laboratory Department of Physics University of Cambridge Madingley Road Cambridge CB3 0HE UK;

Nanomaterials Laboratory National Institute for Materials Science 3-13 Sakura Tsukuba Ibaraki 305-0003 Japan;

Nanomaterials Laboratory National Institute for Materials Science 3-13 Sakura Tsukuba Ib;

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专利

1. Magneto-photoluminescence and transport measurements on modulation-doped Cd1-xMnxTe/Cd1-yMgyTe single quantum wells [J] . Takano F., Kuroda S., Takita K., Physica status solidi, B. Basic research . 2002,第2期

机译：调制掺杂的Cd1-xMnxTe / Cd1-yMgyTe单量子阱的磁光致发光和传输测量
2. Structure Study of Modulation-Doped Cd1-xMnxTe:In/CdTe Strained Layer Multiple Quantum Wells [J] . 中国物理：英文版 . 1994,第012期

机译：调制掺杂Cd1-xMnxTe：In / CdTe应变层多量子阱的结构研究
3. Electronic transport in n-type modulation-doped AIGaAs/GaAsBi quantum well structures: influence of Bi and thermal annealing on electron effective mass and electron mobility [J] . Donmez O., Aydin M., Ardali S., Semiconductor science and technology . 2020,第2期

机译：n型调制掺杂的AIGaAs / GaAsBi量子阱结构中的电子传输：Bi和热退火对电子有效质量和电子迁移率的影响
4. Lateral carrier injection with n-type modulation-doped quantum wells in VCSELs [C] . Lin Chin-Han, Zheng Yan, Gross Matthias, 2011 69th Annual Device Research Conference . 2011

机译：VCSEL中具有n型调制掺杂量子阱的横向载流子注入
5. Transport properties of modulation-doped Si/SiGe quantum well structures. [D] . Becker, Christian E. 2003

机译：调制掺杂的Si / SiGe量子阱结构的传输性质。
6. Magnetotransport study on as-grown and annealed n- and p-type modulation-doped GaInNAs/GaAs strained quantum well structures [O] . Ömer Dönmez, Fahrettin Sarcan, Ayse Erol, 2014

机译：退火生长的n型和p型调制掺杂GaInNAs / GaAs应变量子阱结构的磁输运研究
7. Inversion asymmetry effects in modulation-doped Cd1-xMnxTe quantum wells [O] . Rice Caitlin, Wolverson D, Moskalenko A, 2013

机译：调制掺杂的Cd1-xMnxTe量子阱中的反演不对称效应

Anomalous behaviours of magneto-photoluminescencein n-type modulation-doped Cd1-xMnxTe/Cd1-yMgyTesingle quantum wells

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