Lateral carrier injection with n-type modulation-doped quantum wells in VCSELs

摘要

We have demonstrated a novel Field-Induced Charge-Separation Laser (FICSL) in a Vertical-Cavity Surface-Emitting Laser (VCSEL) embodiment. In addition to the initial optical modulation results that have been presented [1], we here for the first time present details on the novel lateral charge injection structure as well as the advanced bandgap engineering involved in the gate structure. These features together permit high-speed light modulation with a nearly constant injection current. The result is an entirely new concept for high-speed directly-modulated semiconductor lasers.