A High IIP3, 50 GSamples/s Track and Hold Amplifier in 0.25 µm InP HBT Technology

摘要

A 50 GSamples/s track and hold amplifier (THA) is designed and fabricated in a 0.25 μm InP HBT technology. High speed switching functionality in the amplifier is achieved using Base-Collector diodes rather than switched-emitter-followers (SEF). Operating with −5 V and −2.5 V supplies, it achieves IIP3 more than +16 dBm up to 22 GHz. An HD3 of −30.3 dB is measured at +7.5 dBm input power which is P1dB point of THA at 15 GHz. Time domain measurement verifies the sampling rate of 50 GSamples/s in the THA.