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A Study of Diamond Synthesis by Hot Filament Chemical Vapour Deposition on Nanocomposite Coatings

机译:纳米复合涂料热长丝化学气相沉积的金刚石合成研究

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Deposition of diamond films onto various substrates can result in significant technological advantages in terms of functionality and improved life and performance of components. Diamond is hard, wear resistant, chemically inert and biocompatible and considered as the ideal material for surfaces of cutting tools and biomedical components. However, it is well known that diamond deposition onto technologically important substrates such as Co-cemented carbides and steels is problematic due to carbon interaction with the substrate, low nucleation densities and poor adhesion. Several papers previously published in the relevant literature have reported the application of interlayer materials such as metal nitrides and carbides to provide bonding between diamond and hostile substrates. In this study we have investigated for the first time the chemical vapour deposition (CVD) of polycrystalline diamond on TiN/SiN{sub}x nanocomposite interlayers deposited at relatively low temperatures. The nanocomposite layers were deposited at 70°C or 400°C on silicon substrates by using a dual ion beam deposition system. The results showed that a preliminary seeding pre-treatment with diamond suspension was necessary to achieve large diamond nucleation densities and that diamond nucleation was larger on nanocomposite films than on bare sc-Si submitted to same pre-treatment and CVD process parameters. TiN/SiN{sub}x layers synthesized at 70°C or 400°C underwent different nanostructure modifications during diamond CVD. The data also showed that TiN/SiN{sub}x films obtained at 400°C are preferable so far as their use as interlayers between hostile substrates and CVD diamond is concerned.
机译:金刚石膜沉积在各种基板上可导致功能性和改善寿命和组件的寿命和性能的显着技术优势。金刚石坚硬,耐磨,化学惰性和生物相容,并被认为是切削工具和生物医学部件表面的理想材料。然而,众所周知,由于碳相互作用与基材,低成核密度和粘的粘合性差,金刚石沉积在技术重要的底物上是有问题的重要性的重要底物存在问题。先前在相关文献中发表的几篇论文已据报道,诸如金属氮化物和碳化物等中间层材料的应用,以在金刚石和敌对基材之间提供粘合。在该研究中,我们已经研究了在锡/ SiN {Sub} X纳米复合中间层上的多晶金刚石的化学气相沉积(CVD)进行了研究。通过使用双离子束沉积系统,在硅基板上在70℃或400℃下沉积纳米复合材料层。结果表明,在纳米复合薄膜上达到大型金刚石成核密度,纳米复合薄膜的初步种子与金刚石核心的预处理是必要的,并且在裸静脉上大于提交到相同的预处理和CVD工艺参数的裸SC-Si。在金刚石CVD期间,在70°C或400°C中合成的锡/ SIN {SUB} X层在钻石CVD期间进行了不同的纳米结构修饰。数据还表明,在400℃下获得的锡/ SIN {Sub} X薄膜是优选的,因为它们在敌对基板和CVD金刚石之间的用途使用。

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