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A study of diamond synthesis by hot filament chemical vapour deposition on nanocomposite coatings

机译:热丝化学气相沉积在纳米复合涂层上合成金刚石的研究

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Deposition of diamond films onto various substrates can result in significant technological advantages in terms of functionality and improved life and performance of components. Diamond is hard, wear resistant, chemically inert and biocompatible and considered as the ideal material for surfaces of cutting tools and biomedical components. However, it is well known that diamond deposition onto technologically important substrates such as Co-cemented carbides and steels is problematic due to carbon interaction with the substrate, low nucleation densities and poor adhesion. Several papers previously published in the relevant literature have reported the application of interlayer materials such as metal nitrides and carbides to provide bonding between diamond and hostile substrates. In this study, we have investigated for the first time the chemical vapour deposition (CVD) of polycrystalline diamond on TiN/SiN_x nanocomposite interlayers deposited at relatively low temperatures. The nanocomposite layers were deposited at 70℃ or 400℃ on silicon substrates by using a dual ion beam deposition system. The results showed that a preliminary seeding pre-treatment with diamond suspension was necessary to achieve large diamond nucleation densities and that diamond nucleation was larger on nanocomposite films than on bare sc-Si submitted to same pre-treatment and CVD process parameters. TiN/SiN_x layers synthesized at 70℃ or 400℃ underwent different nanostructure modifications during diamond CVD. The data also showed that TiN/SiN_x films obtained at 400℃ are preferable so far as their use as interlayers between hostile substrates and CVD diamond is concerned.
机译:将金刚石膜沉积到各种基材上可以在功能性以及部件的使用寿命和性能方面带来重大的技术优势。金刚石坚硬,耐磨,化学惰性并​​且具有生物相容性,被认为是切削工具和生物医学部件表面的理想材料。然而,众所周知,由于与基体的碳相互作用,低的成核密度和差的粘附性,金刚石沉积在技术上重要的基体例如共硬质合金和钢上是有问题的。先前在相关文献中发表的几篇论文已经报道了中间层材料(例如金属氮化物和碳化物)的应用,以提供金刚石与敌对基材之间的粘结。在这项研究中,我们首次研究了在相对较低的温度下沉积的TiN / SiN_x纳米复合中间层上多晶金刚石的化学气相沉积(CVD)。通过使用双离子束沉积系统,在70℃或400℃下将纳米复合材料层沉积在硅基板上。结果表明,采用金刚石悬浮液进行初步播种预处理对于获得大的金刚石成核密度是必要的,并且在相同的预处理和CVD工艺参数下,纳米复合膜上的金刚石成核比裸露的sc-Si更大。在金刚石CVD中,在70℃或400℃合成的TiN / SiN_x层经历了不同的纳米结构改性。数据还表明,就其用作敌对衬底和CVD金刚石之间的中间层而言,在400℃下获得的TiN / SiN_x膜是优选的。

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