Floating gate non volatile memory made from lead cadmium selenide nanocryatals

摘要

Using colloidal chemistry it is possible to synthesize particles in nanometer regime. By changing the process parameters it is possible to control size and shape of nanoparticles. The paper deals with the synthesis of Lead Cadmium Selenide Nanocrystals using Polyol method and its proposed application in floating gate memory. With lead cadmium Selenide nanoparticles decrease in size of nanoparticles and capacitance was observed, which increases the charging energy. The voltage needed to store the charges in the floating gate calculated was in the range of 0.8V to 1V. The charges can be stored in the floating gate regions either by hot carrier injection or by Fowler-Nordheim (FN) tunneling, which correspond to logic “1” and release or erasing of the charges can be treated as logic “0”, which can be done by Ultraviolet(UV) emission or FN tunneling.