Impact of velocity overshoot, polysilicon depletion, and inversion layer quantization on NMOSFET scaling

摘要

The impact of electron velocity overshoot on MOSFET scaling is investigated. The calibration of a MEDICI 2D device simulator to experimental data is first described. Then, NMOS scaling trends are studied using the calibrated simulator. Inversion layer quantization effects and polysilicon gate depletion are taken into account, and are shown to have a significant impact on NMOS current drive. The results show that velocity overshoot will allow continued enhancement of the NMOS current drive, despite power supply voltage scaling