Prospects for Electro-optic Modulator Based on 2D Transition Metal Dichalcogenides (TMD)

摘要

The strong optical response of atomically thin transition metal dichalcogenides (TMD) makes them the potential candidates for optoelectronic applications. This work discuss the key parameters of WS_2, WSe_2, MoS_2 and MoSe_2 based on tightly bound excition, for design of electro-absorption modulator. The optical absorption of the TMD materials can be modulated by the injection (or depletion of carriers) due to linewidth broadening by more than 50%. The TMD integrated waveguide modulator design is discussed based on tunable absorption coefficient of this novel 2D material. Our calculations illustrate the conceptual possibilities associated with the design of monolayer TMD material based waveguide modulator for visible spectral range.