TiN@Al_2O_3/Al nanocapacitor based on anodic aluminum oxide template

摘要

Through a facile design of the fabrication, Metal-Insulator-Metal nanocapacitor have been achieved over large scale of Anodic Aluminum Oxide template (AAO). Nonetheless, it is still a great challenge to realize a device using ordered nanostructure arrays over a large scale area (>cm~2) by a technique that contains high throughput, low instrument costs and large pattern area. Unique strategy and cost effective technique to achieve an electronic nanodevice has attract much intention through past decade, AAO templates have the opportunity to play a magnificent role in this manner. The key-point in this manner was the barrier layer thickness of AAO template. With optimizes conditions, high-performance metal-insulator-metal nanocapacitors using atomic layer-deposited TiN/Al_2O_3 core-shell nanostructure are fabricated and characterized for mixed-signal applications, in which the core is Al_2O_3 and the shell is TiN nanotube (TiN@Al_2O_3). Nanocapacitor can reach to a high capacitance density, small linear voltage coefficient, and low leakage current of capacitance. Moreover, dependences of leakage current on constant voltage is extensively investigated, in addition, effects of frequency and thickness on capacitance (C) are also revealed.