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Using anodic aluminum oxide templates and electrochemical method to deposit BiSbTe-based thermoelectric nanowires

机译:使用阳极氧化铝模板和电化学方法沉积基于BiSbTe的热电纳米线

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摘要

In this study, the cyclic voltammetry method was first used to find the reduced voltages and anodic peaks of Bi3+, Sb3+, and Te4+ ions as the judgments for the growth of the (Bi,Sb)2 - x Te3 + x-based materials. Ethylene glycol (C2H6O2) was used as a solvent, and 0.3 M potassium iodide (KI) was used to improve the conductivity of the solution. Two different electrolyte formulas were first used: (a) 0.01 M Bi(NO3)3-5H2O, 0.01 M SbCl3, and 0.01 M TeCl4 and (b) 0.015 M Bi(NO3)3-5H2O, 0.005 M SbCl3, and 0.0075 M TeCl4. The potentiostatic deposition process was first used to find the effect of reduced voltage on the variation of compositions of the (Bi,Sb)2 - xTe3 + x-based materials. After finding the better reduced voltage, 0.01 M Bi(NO3)3-5H2O, 0.01 M SbCl3, and 0.01 M TeCl4 were used as the electrolyte formula. The pulse deposition process was successfully used to control the composition of the (Bi,Sb)2 - xTe3 + x-based materials and grow the nanowires in anodic aluminum oxide (AAO) templates.
机译:在这项研究中,首先使用循环伏安法找到Bi 3 + ,Sb 3 + 和Te 4+ <离子作为(Bi,Sb)2-x Te3 + x基材料生长的判断依据。使用乙二醇(C2H6O2)作为溶剂,使用0.3 M碘化钾(KI)改善溶液的电导率。首先使用两种不同的电解质配方:(a)0.01 M Bi(NO3)3-5H2O,0.01 M SbCl3和0.01 M TeCl4和(b)0.015 M Bi(NO3)3-5H2O,0.005 M SbCl3和0.0075 M TeCl4。首先使用恒电位沉积工艺来发现降低的电压对(Bi,Sb)2-xTe 3 + x 基材料的成分变化的影响。找到更好的降低电压后,0.01 M Bi(NO 3 3 -5H 2 O,0.01 M SbCl 3 和0.01 M TeCl 4 用作电解质配方。脉冲沉积过程已成功用于控制(Bi,Sb) 2-x Te 3 + x 基材料的组成并在阳极氧化铝中生长纳米线(AAO)模板。

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