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Growth of Less than 20 nm SnO Nanowires Using an Anodic Aluminum Oxide Template for Gas Sensing

机译:使用阳极氧化铝模板进行气敏生长少于20 nm的SnO纳米线

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摘要

Stannous oxide (SnO) nanowires were synthesized by a template and catalyst-free thermal oxidation process. After annealing a Sn nanowires-embedded anodic aluminum oxide (AAO) template in air, we obtained a large amount of SnO nanowires. SnO nanowires were first prepared by electrochemical deposition and an oxidization method based on an AAO template. The preparation of SnO nanowires used aluminum sheet (purity 99.999%) and then a two-step anodization procedure to obtain a raw alumina mold. Finally, transparent alumina molds (AAO template) were obtained by reaming, soaking with phosphoric acid for 20 min, and a stripping process. We got a pore size of < 20 nm on the transparent alumina mold. In order to meet electroplating needs, we produced a platinum film on the bottom surface of the AAO template by using a sputtering method as the electrode of electroplating deposition. The structure was characterized by X-ray diffraction (XRD). High resolution transmission electron microscopy (HRTEM) and field emission scanning electron microscopy (FESEM) with X-ray energy dispersive spectrometer (EDS) were used to observe the morphology. The EDS spectrum showed that components of the materials were Sn and O. FE-SEM results showed the synthesized SnO nanowires have an approximate length of ~10–20 μm with a highly aspect ratio of > 500. SnO nanowires with a Sn/O atomic ratio of ~1:1 were observed from EDS. The crystal structure of SnO nanowires showed that all the peaks within the spectrum lead to SnO with a tetragonal structure. This study may lead to the use of the 1D structure nanowires into electronic nanodevices and/or sensors, thus leading to nano-based functional structures.
机译:氧化亚锡(SnO)纳米线是通过模板和无催化剂热氧化工艺合成的。在空气中退火嵌入Sn纳米线的阳极氧化铝(AAO)模板后,我们获得了大量的SnO纳米线。首先通过电化学沉积和基于AAO模板的氧化方法制备SnO纳米线。 SnO纳米线的制备使用铝片(纯度为99.999%),然后分两步进行阳极氧化,以获得生氧化铝模具。最后,通过扩孔,用磷酸浸泡20分钟并进行剥离工艺,获得透明的氧化铝模具(AAO模板)。在透明氧化铝模具上,我们得到的孔径小于20 nm。为了满足电镀需求,我们通过溅射方法在AAO模板的底面上制作了一层铂膜作为电镀沉积电极。该结构通过X射线衍射(XRD)表征。使用高分辨率透射电子显微镜(HRTEM)和带有X射线能量色散光谱仪(EDS)的场发射扫描电子显微镜(FESEM)来观察形态。 EDS光谱表明,材料的成分为Sn和O。FE-SEM结果显示,合成的SnO纳米线的长度约为〜10–20μm,高纵横比大于500。具有Sn / O原子的SnO纳米线。从EDS观察到约1:1的比率。 SnO纳米线的晶体结构表明,光谱内的所有峰均导致具有四方结构的SnO。这项研究可能会导致将一维结构纳米线用于电子纳米器件和/或传感器,从而导致基于纳米的功能结构。

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