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The effect of doping process on the structural and optical properties of Ag2Se thin films

机译:掺杂工艺对Ag2SE薄膜结构和光学性质的影响

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Ag2Se alloys have been prepared, thin films of this compound has been deposited by the thermal evaporation method under a vacuum of 10~(-5) Torr, on coring glass substrate at room temperature. They have a thickness of (500±10) name and rate of deposition (2.07813nm Sec-1). The Ag2Se films has been doped by different elements (Al, Bi, Sb, and Cd) with a constant ratio 2% by thermal diffusion method. The structure of the alloys and the thin films have been examined by the XRD method show that the thin films have (Orthorhombic) structure, the doping of all the elements in general caused to conform the crystalline nature and the preferred orientation at (002), with the gain in the crystalline size. The optical properties of the prepared films have been investigated. The optical absorption coefficient (a) of the films was determined from absorbance spectra in the range of wavelength (200-1100) nm. The optical energy gap was found to allow direct transition, which decreases with the doping process, also the optical constant have been calculated. The grain size and roughness have been measured with AFM, they increased by adding impurity element.
机译:已经制备了Ag2Se合金,该化合物的薄膜通过在室温下在芯玻璃基板上的10〜(5)托的真空下通过热蒸发方法沉积。它们的厚度(500±10)名称和沉积速率(2.07813nm-1)。通过热扩散法,通过不同的元素(Al,Bi,Sb和Cd)被不同的元素(Al,Bi,Sb和Cd)掺杂,其恒定比例为2%。通过XRD方法检查了合金的结构和薄膜,表明薄膜具有(正交)结构,一般导致所有元素的掺杂使得符合(002)的晶体性质和优选的取向,在结晶尺寸中的增益。已经研究了制备的薄膜的光学性质。薄膜的光学吸收系数(a)是从波长(200-1100)nm的吸光光谱中的吸光光谱。发现光学能隙允许直接过渡,这与掺杂过程降低,也已经计算了光学常数。通过添加杂质元素来测量晶粒尺寸和粗糙度。

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