Passivation of Defects in Macroscopic Graphene Sheets Via Selective Atomic Layer Deposition of Metal Oxides

摘要

Graphene, with its high conductivity, specific surface area, and overall chemical inertness, has been heavily researched for applications in batteries, supercapacitors, and water-splitting devices. While graphene films can be synthesized over large areas (>1 cm~2) through chemical vapor deposition, graphene generated through this route exhibits a high defect density that can inhibit performance and stability in electrochemical systems. Considerable effort has been devoted to passivating, repairing, and remediating these defects for graphene-based devices to match their theoretical potential.