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Synthesis of Psi/CuO/Cu_2o Heterostructure for NH_3 Vapor Detection at Room Temperature

机译:在室温下为NH_3蒸汽检测合成PSI / CUO / CU_2O异质结构

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In this paper, we demonstrate the use of the heterostructure porous silicon PSi-n/CuO-p/Cu_2O-n as an alternative structure for an efficient gas sensor for NH_3 sensing. The porous silicon PSi was prepared using an electrochemical method and utilized as a substrate. Then, CuO homogeneous thin films were synthesized by thermal evaporation/oxidation on the pre-prepared PSi substrate, on which a uniform layer of Cu_2O is deposited by electrodeposition method.
机译:在本文中,我们证明了异质结构多孔硅PSI-N / CUO-P / CUO-NO-N作为用于NH_3感测的有效气体传感器的替代结构。 使用电化学方法制备多孔硅PSI并用作基材。 然后,通过预制的PSI衬底上的热蒸发/氧化来合成CuO均匀薄膜,通过电沉积方法沉积均匀的Cu_2O层。

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