Fabrication and Characterisation of Silicide/3C-SiC/Si Contacts for Schottky Barrier Diode Application

摘要

Silicon carbide is a wide band gap semiconductor which presents excellent physical properties such as a high critical electric field strength which enables the realisation of efficient power devices. The cubic silicon carbide (3C-SiC) polytype has been less investigated than the more popular hexagonal structure 4H-SiC. 3C-SiC has the advantage that it can be epitaxially grown on Si by chemical vapour deposition (CVD) and presents properties suitable for achieving cost effective SiC power devices in the range 650V to 1200V. These 3C-SiC/Si substrates offer a promising alternative to the costly hexagonal SiC (4H-SiC) wafers and can also be used as template for the epitaxy of cubic GaN. However, the presence of the Si substrate does limit the temperature available to anneal out the implantation damage generated by some device processing sequences.