High-Performance Thin-Film Transistors Enable By Metal Oxide Semiconductor with Polyaniline Doing in the Channel Layer

摘要

Thin-film transistors (TFTs) using metal oxide-based semiconductors have attracted much attention because of their high carrier mobility, excellent optical transparency, low process temperature and solution process. In particular, indium oxide(InO_x) is capable of aqueous routes for environmentally friendly and shows excellent carrier transport due to high carrier concentrations. Despite these advantages, pristine InO_x films are generally polycrystalline structures, making it difficult to apply to flexible electronics, and it is necessary to adjust the carrier density to improve stability. Moreover, such a polycrystalline thin film does not exhibit uniform threshold voltage and field-effect mobility, making it difficult to enlarge the device. To address this problems, InO_x was doped with inorganic materials such as Ga, Zn, Sn and Sc. Since the thin film transistors using these amorphous metal oxide semiconductor lowers the carrier density, it adversely affects carrier mobility.