Effects of stress in III-V solar cells

摘要

Planar, thermal stresses were applied to GaInP/GaAs/Ge cascade structures by bonding cells to Si or Al plates. After thorough evaluation, it was found that electrical properties of the solar cell were not affected by the stress. Using other characterization methods, the bandgap of the stressed cell was widened, and PL mapping showed improvement in the electronic quality of the sample. Triple-axis X-ray measurement did not resolve the relative variation in d-spacing of the stressed epi-layers, but lateral variation of the crystal was observed. These laboratory observations were in agreement with numerical simulation