New intelligent power module with silicon carbide diode

摘要

This paper presents a new CIPOS™ (Control Integrated POwer System) in DIL (Dual-in-line) package with transfer molded type, which combines with the features of Infineon SiC (silicon carbide diode), Infineon trench field stop technology IGBT and optimized Infineon SOI (Silicon On Insulator) gate driver to achieve the excellent solution for up to 3kW motor drives. By using SiC solution, better efficiency is realized for fast switching application. Especially, this module offers the smallest package size with high power density. This paper provides an overall description of the new CIPOS™ module as well as adopted SiC electrical characteristics, thermal performance, trench field stop technology IGBT and SOI gate driver.