Influence of Substrate Temperature on Carbon Film Deposition in Surface Wave exited Plasma CVD Apparatus

摘要

A DC bias method to control the space potential of the bulk plasma in a Ring Dielectric Line typed Surface Wave exited Plasma (RDL-SWP) apparatus has been studied. Using this bias method, a nanocrystalline diamond (NCD) film with very smooth surface was synthesized under the condition of -70V bias voltage and 650°C substrate temperature in Ref (1). And a NCD film was deposited under the condition of lower substrate temperature as 430°C and -190V bias voltage, although the space potential of bulk plasma had been saturated to -10.7V at lower bias voltages than -100V in previous experiments. In this study, it is purposed to investigate experimentally the reason why the characteristics of deposited films were changed after the plasma space potential had been saturated, with synthesizing carbon films under the condition of various bias voltages and different substrate temperatures in the target range shown in Fig.1. In this paper, experiments for synthesizing carbon films were carried out to evaluate the influence of substrate temperature at -100V bias voltage and the experimental results were presented.