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Measurement of stresses in MEMS structures by stress release

机译:压力释放测量MEMS结构中的应力

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The paper presents a recently developed method of measuring frozen elastic stresses in micro components and devices. The approach bases on stress release at the component surface by focused ion beam (FIB) milling. Stresses are deduced from the experimentally determined deformation field around the FIB milling pattern, applying reasonable stress hypotheses and appropriate modeling of the stress release field. Because of the local nature of ion milling and the limited material volume affected by deformation, the method suites to very local stress measurement. Commonly, spatial resolution is achieved in a range from submicron to some tens of microns. Residual stresses in membrane type MEMS stmctures have been measured and results are reported. A broader group of potential applications is expected for non-membrane structures in micro-/nanosystems or their packaging. Possible approaches for those cases are discussed, considering comparison of measured deformation fields with either analytical solutions of the mechanical problem or with finite element simulations.
机译:本文介绍了最近开发的测量微量部件和器件中的冷冻弹性应力的方法。通过聚焦离子束(FIB)铣削,该方法基于组分表面的应力释放。从围绕FIB铣削图案的实验确定的变形场推导出应力,施加合理的应力假设和应力释放场的适当建模。由于离子铣削的本地性质和受变形影响的有限的材料体积,方法套件适应非常局部应力测量。通常,从亚微米到一些十几个微米的范围内实现空间分辨率。已经测量了膜型MEMS STMCTURE中的残余应力并报告结果。预计微/纳米系统或其包装中的非膜结构预期更广泛的潜在应用。讨论了这些情况的可能方法,考虑到测量的变形场与机械问题的分析解决方案或有限元模拟的比较。

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