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Surface Plasma Treatment and Sensibilization of Tin Dioxide Films for Enhancement of Gas Sensitivity and Selectivity

机译:表面等离子体处理和二氧化锡敏感性,提高气体敏感性和选择性

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Results of investigation aimed at the improvement of gas sensitive characteristics of tin dioxide thin film's based gas sensors through their treatment in high frequent (HF) oxygen plasma and sensibilization by means of doping are presented. Tin dioxide thin films were deposited from alcohol solutions of SnCl_4 5H_2O by means of chemical spray pyrolysis method on alumina substrate at the temperatures in the range from 400 to 500°C. The thickness of films was varied in the range 20-100 nm. Surface treatment of obtained tin dioxide layers was carried out in pure oxygen plasma at room temperature and 3-4 times increase of the resistance and gas sensitivity was obtained at that. These parameters' changing is discussed from the point of view of thin film's stoichiometry alteration, for control of which there were used IR and SIMS measurements. Obtained results are compared with results of the film's high temperature (~600°C) thermal annealing on air. To increase thin film's gas sensitivity and selectivity the doping with Pd and Cu was applied. Doping was carried out also through chemical spray pyrolysis method from the solutions of corresponding compounds of Pd and Cu. Such modification of SnO_2 surface has allowed to increasing sensitivity to H_2 up to 5 10~3 rel. units (high selectivity) at the simultaneous shift of sensitivity maximum from 350 to 150°C. Doping with Cu has allowed to increasing 4-5 times sensitivity and selectivity toward CH_4 and C_3H_8 gases in air and reducing operating temperatures from 500-520°C to 350-370°C. It is concluded that combination of HF oxygen plasma tin dioxide film' treatment and its surface sensibilization is an effective way to considerably improvement of gas sensitive and selective characteristics of tin dioxide based thin film gas sensors (TFGS).
机译:介绍了旨在通过在高频繁(HF)氧等离子体中的高频率(HF)氧等离子体和掺杂的敏感性的基于天氧化钛薄膜的气体传感器的气敏特性的研究结果。通过在400至500℃的温度下,通过化学喷雾热解法从SnCl_4 5H_2O的醇溶液中沉积二氧化锡薄膜。薄膜的厚度在20-100nm的范围内变化。在室温下在纯氧等离子体中在纯氧等离子体中进行所得二氧化锡层的表面处理,并且在该温度下增加了3-4倍的抗性和气体敏感性。从薄膜的化学计量改变的角度来看,讨论了这些参数的改变,用于控制其使用IR和SIMS测量。将得到的结果与薄膜的高温(〜600℃)热退火的结果进行比较。为了提高薄膜的气体敏感性和选择性,施用具有Pd和Cu的掺杂。通过来自Pd和Cu的相应溶液的溶液,通过化学喷雾热解方法进行掺杂。 SnO_2表面的这种改变使得允许对H_2的敏感性增加至50〜3 rel。单位(高选择性)在敏感度的同时移位,最大350至150°C。掺杂Cu使得允许在空气中增加4-5倍的灵敏度和选择性,并将其在空气中的气体和C_3H_8气体中的选择性,并将工作温度从500-520℃降低至350-370℃。结论是,HF氧等离子体二氧化锑膜处理及其表面敏感性的组合是一种有效的途径,可显着提高基于二氧化锡的薄膜气体传感器(TFGS)的气体敏感和选择性特性。

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