The porous silicon deserves great scientific attention due to intensive photoluminescence can be observed at the room temperature. With the purpose of modeling photo-electric properties of porous silicon the researches of influence of non-uniform deformation of silicon monocrystal on the form of spectral distribution of photoconductivity were carried out. Measurements of the photoconductivity (PC) and photomagnetic effect (PME) spectra of crystalline silicon were carried out for the sample under the non-uniform bend deformation. This deformation causes a decrease of the photoconductivity spectrum drop in the short-wave region when illuminating the stretched surface. Under constant deformation conditions the PME spectrum form is changed only in the long-wave region. Obtained data are explained by diffusion length decreasing as a consequence of decreasing diffusion coefficient under the influence of a strain gradient. The analysis of the investigated photo-electric properties of porous silicon has resulted in a conclusion about the excitation photoluminescence occurs in amorphous matrix of porous silicon. And the important role plays drift of nonequilibrium carriers of a charge in an internal electrical field of porous silicon at carry of energy the excitation from area of generation to the centre of luminescence. The work has excellent application for production of porous silicon based photodiodes with improve performances.
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