METHOD FOR PRODUCING CRYSTALLINE SILICON OF PHOTOELECTRIC QUALITY BY ADDITION OF DOPING IMPURITIES AND PHOTOELECTRIC ELEMENT

摘要

1. A silicon-based photovoltaic cell, characterized in that silicon contains a concentration of donor alloying elements and / or acceptor alloying elements greater than or equal to 5 atomic parts per million, and the difference between these two concentrations is less than or equal to 5 atomic parts / million ! 2. The photovoltaic cell according to claim 1, characterized in that the concentration of boron is greater than or equal to 5 at.h / million ! 3. The photovoltaic cell according to claim 1, characterized in that the concentration of phosphorus is greater than or equal to 5 at.h / million ! 4. A method of producing crystalline silicon of photoelectric quality by crystallization of molten silicon raw materials, characterized in that the sum of the initial concentrations of donor alloying elements and acceptor alloying elements in silicon raw materials is greater than 0.1 at.h / million, the concentration of both acceptor and donor alloying elements are less than 25 at. ppm, and the method includes before crystallization of silicon:! - determination of the concentrations of alloying substances of the donor type and acceptor type, originally present in the raw material,! - adding at least a predetermined amount of dopant with a distribution coefficient of less than 0.1 to satisfy at least 50% of crystallized silicon from the start of crystallization, or the first equation for p-type crystalline silicon! ! or the second equation for n-type crystalline silicon! ! moreover, in these equations! - k a, k d correspond to the distribution coefficients of acceptor alloying elements and donor alloying elements, respectively! - C 0a, C 0d correspond to the end�