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Characterization of Crystalline Silicon via XRPD

机译:通过XRPD进行晶体硅的表征

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Three blocks of silicon have been crashed in this experiment in order to verify the crashing effects on specimens having distinct original micro-structural arrangements. One of them comes from a rod bar of mono-crystal silicon, two others were from polycrystalline silicon manufactured by two distinct manufacturers with distinct growing process. Several specimens of powders, differing in type and grain size, were obtained by treating these source samples. This paper reports on data collected from synchrotron and conventional radiation and the results show that powders obtained from mono-crystalline silicon provide diffraction profiles, where the structural contribution is smaller than for polycrystalline silicon specimens. The peaks from the "mono-crystal powder" resulted even narrower than peaks from SRM Silicon 640b by NIST.
机译:在该实验中崩溃了三个硅块,以验证对具有不同原始微结构布置的标本的撞击效果。 其中一个来自单晶硅的杆棒,另外两种是由两个不同制造商制造的多晶硅,具有不同的生长过程。 通过治疗这些源样品获得若干粉末样品,型型型和晶粒尺寸不同。 本文报告了从同步辐射收集的数据,结果表明,从单晶硅获得的粉末提供衍射曲线,其中结构贡献小于多晶硅样品。 来自“单晶粉末”的峰导致甚至比NIST来自SRM硅640B的峰值窄。

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