ELECTRICAL CHARACTERISTICS IMPROVEMENT OF Dy{sub}2O{sub}3 THIN FILMS BV IN-SITU VACUUM ANNEAL

摘要

Dysprosium oxide (Dy{sub}2O{sub}2) deposited by MBE on n-Si (100) was investigated. The electrical characteristics of the films seemed to depend on the annealing process after deposition. In the case of ex-situ O{sub}2 RTA for 5 nun, the accumulation capacitance in the C-V characteristic decreased by the interfacial layer growth. On the other hands, it was found that excellent C-V characteristics without decrease of accumulation capacitance were obtained by in-situ vacuum anneal.