Characterization and simulation of polysilicon TFT-CMOS circuits for HDTV display applications

摘要

Polysilicon thin-film transistors (TFTs) and TFT-CMOS circuits are processed, characterized and modeled for integrated driver applications in high definition display systems. The I-V characteristics of n- and p-channel TFTs are simulated by adjusting the parameters available in a SPICE MOSFET model. The similarities and differences in SPICE simulation of TFTs and MOSFETs are highlighted. The speed achievable in TFT circuits is discussed using time response of basic subcircuits. The performance of static scan drivers and subcircuits is also simulated and discussed.