Improvement of the Reliability of Thin-Film Interconnections Based on the Control of the Crystallinity of the Thin Films

摘要

In this study, the degradation mechanism of electronic performance of electroplated copper interconnections was investigated by considering their crystallinity of grain boundaries. The crystallinity of the interconnections was evaluated quantitatively by applying an EBSD (Electron Back-scattered Diffraction) method. It was found that the crystallinity of the interconnections varied drastically depending on the seed layer material for electroplating. A new design guideline for highly reliable electroplated copper thin film interconnections was proposed based on the measured results.