Novel Thin Film Transistors with Oxide Semiconductor Mgln_2O_4 with and without Substitutional Doping

摘要

Novel MgIn_2O_4-TFTs were presented. By substituting Al on Mg site, carrier generation was controlled. The doped TFT operated in normally-off mode with relatively high field-effect mobility and was less sensitive to the oxygen flow rate during the sputtering process of the active layer. The doping enlarged the process margin and stabilized the TFT characteristics at high levels.