GaAs/InxGa1#x2212;xAs/GaAs/AlAs resonant tunneling diodes for novel MEMS gyroscope application

摘要

GaAs/InxGa1−xAs/GaAs/AlAs double barrier resonant tunneling diodes (RTDs) are designed as the stress gauge element for the gyroscope application, which is based on their meso-pizeoresistive effect. The RTD with double air-bridges is fabricated using molecular beam epitaxy (MBE) and GaAs surface micromaching technology. Raman spectroscopy is used for the stress measurements. Combining the stress measurement and the RTD I–V characterization, it is concluded that the valley point in negative resistance area has the highest sensitivity reaching up to 1.03 × 10−4V/MPa. The GaAS based gyroscope is designed and fabricated. According to the test results, the angler of gyroscope measurement range of ±500°/s, that has a sensitivity of 9.35µV/°/s and linearity of 0.99259.