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Wafer-level thin film vacuum packages for MEMS using nanoporous anodic alumina membranes

机译:使用纳米多孔阳极氧化铝膜的MEMER级薄膜真空包装

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This paper reports on a wafer-level thin film vacuum packaging technology for MEMS. It is based on the fabrication of freestanding porous anodic alumina membranes of a typical thickness of 2 to 3µm, featuring cylindrical nanopores that are a mere 15–20nm in diameter (aspect ratio >100). The fabrication process involves in situ perforation of the thin AlOx barrier layer present at the bottom of the nanoporous membranes. For the present paper, a silicon oxide sacrificial layer and a vapor-phase HF release etch through the pores are utilized. The thin film packages are next sealed with a 4µm-thick PECVD nitride layer. Strong and “air-tight” thin film packages are obtained this way. Negligible impact on the RF transmission losses (up to 67GHz) is observed. A basic assessment of the package hermeticity based on the cap deflection method is also presented.
机译:本文报告了MEMS的晶圆级薄膜真空包装技术。 它是基于独立式多孔阳极氧化铝膜的典型厚度为2至3µ m的制备,其具有圆柱形纳米孔,其直径仅为15-20nm(纵横比> 100)。 制造过程涉及存在于纳米多孔膜底部的薄Alox阻隔层的原位穿孔。 对于本文,利用氧化硅牺牲层和通过孔的蒸汽相HF释放蚀刻。 接下来用4&#00b5; m厚的pecvd氮化物层密封薄膜封装。 强壮和“气密” 以这种方式获得薄膜包。 观察到对RF传输损耗的忽略不计(最多67GHz)。 还介绍了基于帽偏转方法的包装密封性的基本评估。

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