Preparation of SiO_xN_y films by reactive KrF laser ablation

摘要

Various siO_xN_y films were prepared from Si_3N_4 target by reactive KrF laser ablation under various oxygen pressures (10~(-7) approx 10~(-2) Torr). Oxygen content in these films increased and nitrogen content decreased with increasing oxygen pressure. A composite film piled with various SiO_xN_y layers was prepared by KrF laser irradiation onto Si_3N_4 target for 2.5 min with increasing oxygen pressure stepwise gradually from 10~(-7) to 10~(-2) Torr.