Characteristics of Millisecond Solid Phase Crystallization of Phosphorus Doped Silicon Film Annealed by Thermal-Plasma-Jet Irradiation

摘要

Research on polycrystalline silicon thin film transistors has been restored recently because of its wide technology application . Solid phase crystallization (SPC) of amorphous silicon (a-S) is the simplest way to make polysilicon. However, there is limited publications about millisecond SPC formed at high temperature. In our research, we will find out the electrical characteristics of millisecond SPC of phosphorous (P) doped a-Si induced by micro-thermal-plasma jet (µ-TPJ).